Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence - I-Scover metadata
ARTICLE

Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence

Metadata details

now loading...

Related ARTICLE(s)

now loading...

Related metadata

now loading...

Search by external websites

now loading...

Login 日本語