Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement - I-Scover metadata
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Simulation Study of a Novel Collector-up npn InGaP/GaAs Heterojunction Bipolar Transistor with a p-Type Doping Buried Layer for Current Confinement

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