Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation - I-Scover metadata
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Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation

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