Estimation of Yield Suppression for 1.5 V-1 Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions - I-Scover metadata
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Estimation of Yield Suppression for 1.5 V-1 Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions

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