High-speed operation of 1.3 um GaAs/InGaAs metamorphic lasers fabricated by using highly-accurate control of crystal lattice relaxation based on in-situ wafer curvature measurement - I-Scover metadata
ARTICLE

High-speed operation of 1.3 um GaAs/InGaAs metamorphic lasers fabricated by using highly-accurate control of crystal lattice relaxation based on in-situ wafer curvature measurement

Metadata details

now loading...

Related ARTICLE(s)

now loading...

Related metadata

now loading...

Search by external websites

now loading...

Login 日本語