DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects - I-Scover metadata
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DC and RF Performances of Nanogate InGaAs/InAs/InGaAs Channel HEMTs Studied by Monte Carlo Simulations Considering Strain and Quantum Confinement Effects

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