Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control - I-Scover metadata
ARTICLE

Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control

Metadata details

now loading...

Related ARTICLE(s)

now loading...

Related metadata

now loading...

Search by external websites

now loading...

Login 日本語