Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition - I-Scover metadata
ARTICLE

Fabrication of AlGaN/GaN MOSFETs with Al2O3 gate oxide deposited by atomic layer deposition

Metadata details

now loading...

Related ARTICLE(s)

now loading...

Related metadata

now loading...

Search by external websites

now loading...

Login 日本語