A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric - I-Scover metadata
ARTICLE

A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric

Metadata details

now loading...

Related ARTICLE(s)

now loading...

Related metadata

now loading...

Search by external websites

now loading...

Login 日本語